IRFHM8329PBF 1 www.irf.com ? 2012 international rectifier december 20, 2012 hexfet ? power mosfet base part number package type standard pack orderable part number ? ? form quantity IRFHM8329PBF pqfn 3.3 mm x 3.3 mm tape and reel 4000 irfhm8329trpbf v dss 30 v r ds(on) max (@ v gs = 10v) 6.1 ? (@ v gs = 4.5v) 8.8 qg (typical) 13 ? nc i d (@t c (bottom) = 25c) 24 ? a m ??? v gs max 20 v features benefits low thermal resistance to pcb (<3.8c/w) enable better thermal dissipation low profile (<1.05 mm) increased power density industry-standard pinout results in multi-vendor compatibility compatible with existing surface mount techniques ?? easier manufacturing rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, consumer qualification increased reliability notes ? through ? are on page 8 absolute maximum ratings ?? parameter max. units v gs gate-to-source voltage 20 v i d @ t a = 25c continuous drain current, v gs @ 10v 16 a i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v 57 ?? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 36 ?? i dm pulsed drain current ? 230 p d @t a = 25c power dissipation ? 2.6 w p d @t c(bottom) = 25c power dissipation ? 33 linear derating factor ? 0.021 w/c t j operating junction and -55 to + 150 c t stg storage temperature range i d @ t a = 70c continuous drain current, v gs @ 10v 13 i d @ t c = 25c continuous drain current, v gs @ 10v (source bonding technology limited) 24? applications ?? charge and discharge switch for notebook pc battery application ?? system/load switch ?? synchronous mosfet for buck converters ? 3 2 1 8 7 6 5 4 d d d d s s s g top view pqfn 3.3x3.3 mm ? s g s s d d d d d
? IRFHM8329PBF 2 www.irf.com ? 2012 international rectifier december 20, 2012 ??? parameter typ. max. units r ? jc (bottom) junction-to-case ? ??? 3.8 r ? jc (top) junction-to-case ? ??? 42 c/w r ? ja junction-to-ambient ? ??? 47 r ? ja (<10s) junction-to-ambient ? ??? 32 thermal resistance avalanche characteristics parameter typ. max. units e as single pulse avalanche energy ? ??? 43 mj i ar avalanche current ? ??? 20 a d s g static @ t j = 25c (unless otherwise specified) ???? parameter min. typ. max. units conditions bv dss drain-to-source breakdown voltage 30 ??? ??? v v gs = 0v, i d = 250a ? bv dss / ? t j breakdown voltage temp. coefficient ??? 21 ??? mv/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? 4.8 6.1 m ? v gs = 10v, i d = 20a ? ??? 6.8 8.8 v gs = 4.5v, i d = 16a ? v gs(th) gate threshold voltage 1.2 1.7 2.2 v v ds = v gs , i d = 25a ? v gs(th) gate threshold voltage coefficient ??? -6.0 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a v ds = 24v, v gs = 0v ??? ??? 150 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v gfs forward transconductance 56 ??? ??? s v ds = 10v, i d = 20a q g total gate charge ??? 26 ??? nc v gs = 10v, v ds = 15v, i d = 20a q g total gate charge ??? 13 20 q gs1 pre-vth gate-to-source charge ??? 2.9 ??? ? v ds = 15v q gs2 post-vth gate-to-source charge ??? 2.0 ??? nc v gs = 4.5v q gd gate-to-drain charge ??? 4.6 ??? ? i d = 20a q godr gate charge overdrive ??? 3.5 ??? ? q sw switch charge (q gs2 + q gd ) ??? 6.6 ??? ? q oss output charge ??? 7.8 ??? nc v ds = 16v, v gs = 0v r g gate resistance ??? 1.4 ??? ? ? t d(on) turn-on delay time ??? 14 ??? v dd = 15v, v gs = 4.5v t r rise time ??? 74 ??? ns i d = 20a t d(off) turn-off delay time ??? 14 ??? ? r g =1.8 ? t f fall time ??? 14 ??? ? c iss input capacitance ??? 1710 ??? v gs = 0v c oss output capacitance ??? 360 ??? pf v ds = 10v c rss reverse transfer capacitance ??? 180 ??? ? ? = 1.0mhz diode characteristics parameter min. typ. max. units conditions i s continuous source current ??? ??? 24 ?? a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 230 integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c, i s = 20a, v gs = 0v ? t rr reverse recovery time ??? 13 20 ns t j = 25c, i f = 20a, v dd = 15v q rr reverse recovery charge ??? 8.1 12 nc di/dt = 290a/s ?
? IRFHM8329PBF 3 www.irf.com ? 2012 international rectifier december 20, 2012 fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs . gate-to-source voltage fig 3. typical transfer characteristics fig 2. typical output characteristics 2 3 4 5 6 7 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v ? 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 10203040 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds= 6v i d = 20a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.0v 2.8v bottom 2.5v ? 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 4.5v 4.0v 3.5v 3.0v 2.8v bottom 2.5v ? 60s pulse width tj = 150c 2.5v
? IRFHM8329PBF 4 www.irf.com ? 2012 international rectifier december 20, 2012 fig 8. maximum safe operating area fig 11. maximum effective transient thermal impedance, junction-to-case fig 7. typical source-drain diode forward voltage -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25a i d = 250a i d = 1.0ma i d = 1.0a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r ma l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig 9. maximum drain current vs. case temperature fig 10. drain-to?source breakdown voltage 0.0 0.5 1.0 1.5 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec 100sec dc operation in this area limited by r ds (on) limited by package 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) limited by source bonding technology ?
? IRFHM8329PBF 5 www.irf.com ? 2012 international rectifier december 20, 2012 fig 12. on? resistance vs. gate voltage fig 13. maximum avalanche energy vs. drain current fig 14. typical avalanche current vs. pulsewidth 0.0 4.0 8.0 12.0 16.0 20.0 v gs , gate-to-source voltage (v) 0 5 10 15 20 25 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) t j = 25c t j = 125c i d = 20a 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.0a 8.6a bottom 20a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. (single pulse) allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse)
? IRFHM8329PBF 6 www.irf.com ? 2012 international rectifier december 20, 2012 fig 15. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 18a. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 18b. gate charge waveform fig 16a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v t p v (br)dss i as fig 16b. unclamped inductive waveforms fig 17a. switching time test circuit fig 17b. switching time waveforms
? IRFHM8329PBF 7 www.irf.com ? 2012 international rectifier december 20, 2012 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 3.3mm x 3.3mm outline package details pqfn 3.3mm x 3.3mm outline part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf
? IRFHM8329PBF 8 www.irf.com ? 2012 international rectifier december 20, 2012 qualification information ? ? qualification level moisture sensitivity level pqfn 3.3mm x 3.3mm msl1 (per jedec j-std-020d ??? ) rohs compliant yes consumer ?? (per jedec jesd47f ??? guidelines) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ camber not e: 1. dimension measured on the bottom of the cavity. 2. pitch tolerance over any 10 pitches = 0.008 [0.2] 3. esd requirement: 0200volts 4. surface resistivity = 10 to 10 ohms per square inch 5. roll should contain splice-free material 6. engrave resy symbol every 100 sprockets (about 15.75 [400] ( conform supplier specification) ps the camber shall not exceed in 1mm/250 pqfn 3.3mm x 3.3mm outline tape and reel ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales repres entative for further information: http://www.irf.com/whoto-call/salesrep/ ??? applicable version of jedec standar d at the time of product release. notes: ? ? repetitive rating; pulse width limited by max. junction temperature. ? starting t j = 25c, l = 0.22mh, r g = 50 ? , i as = 20a. ? pulse width ? 400s; duty cycle ? 2%. ? r ? is measured at t j of approximately 90c. ? when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. please refer to an-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf ? calculated continuous current based on maxi mum allowable junction temperature. ? current is limited to 25a by source bonding technology.
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